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savantic semiconductor product specification silicon npn power transistors 2SC3063 d escription with to-126 package high v c eo low c o b applications for tv video output amplification pinningsee fig.2 pin description 1 emitter 2 collector 3 base absolute maximum ratings (ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 300 v v ceo collector-emitter voltage open base 300 v v ebo emitter-base voltage open collector 7 v i c collector current 0.1 a i cm collector current-peak 0.2 a p c collector power dissipation 1.2 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC3063 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v cesat collector-emitter saturation voltage i c =30ma ;i b =3m a 1.5 v v be base-emitter on voltage i c =30ma ; v ce =10v 1.2 v v (br)cbo collector-base breakdown voltage i c =10a;i e =0 300 v v (br)ceo collector-emitter breakdown voltage i c =100a; i b =0 300 v v (br)ebo emitter-base breakdown voltage i e =10a; i c =0 7 v h fe dc current gain i c =5ma ; v ce =50v 50 250 c ob output capacitance i e =0; v cb =30v;f=1mhz 2.4 pf f t transition frequency i e =-20ma ; v cb =30v 70 mhz
savantic semiconductor product specification 3 silicon npn power transistors 2SC3063 package outline fig.2 outline dimensions
savantic semiconductor product specification 4 silicon npn power transistors 2SC3063

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